RQK0606KGDQA features ? low on-resistance r ds(on) = 173 m typ.(at v gs = 4.5 v, i d = 0.8 a) ? low drive current ? high speed switching ? v dss 60 v and capable of 2.5 v gate drive outline (package name: mpak ) 1. source 2. gate 3. drain g d s 2 1 3 1 2 3 notes: marking is ?kg?. absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 12 v drain current i d 1.5 a drain peak current i d(pulse) note1 6 a body - drain diode reverse drain current i dr 1.5 a channel dissipation pch note2 0.8 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr-4 40 40 1 mm) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 60 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss +12 ? ? v i g = +100 a, v ds = 0 gate to source breakdown voltage v (br)gss ?12 ? ? v i g = ?100 a, v ds = 0 gate to source leak current i gss ? ? +10 a v gs = +10 v, v ds = 0 gate to source leak current i gss ? ? ?10 a v gs = ?10 v, v ds = 0 drain to source leak current i dss ? ? 1 a v ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 0.4 ? 1.4 v v ds = 10 v, i d = 1 ma drain to source on state resistance r ds(on) ? 173 225 m i d = 0.8 a, v gs = 4.5 v note3 drain to source on state resistance r ds(on) ? 207 290 m i d = 0.8 a, v gs = 2.5 v note3 forward transfer admittance |y fs | 2.3 4 ? s i d = 0.8 a, v ds = 10 v note3 input capacitance ciss ? 200 ? pf output capacitance coss ? 25 ? pf reverse transfer capacitance crss ? 14 ? pf v ds = 10 v v gs = 0 f = 1 mhz turn - on delay time t d(on) ? 11 ? ns rise time t r ? 27 ? ns turn - off delay time t d(off) ? 31 ? ns fall time t f ? 4 ? ns i d = 0.8 a v gs = 10 v r l = 12.5 rg = 4.7 total gate charge qg ? 2.2 ? nc gate to source charge qgs ? 0.4 ? nc gate to drain charge qgd ? 0.7 ? nc v dd = 10 v v gs = 4.5 v i d = 1.5 a body - drain diode forward voltage v df ? 0.8 ? v i f = 1.5 a, v gs = 0 note3 notes: 3. pulse test RQK0606KGDQA product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
